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Hafren - High Voltage Lateral Bulk CMOS FETs

Hafren aims to develop innovative lateral MOS-based high voltage (HV) devices (Vbr>1kV) to replace oversized and inefficient vertical MOSFETs in various applications such as medical devices, consumer electronics (AC/DC converters), and LED drivers. These lateral devices will be significantly smaller, with up to 10 times lower capacitance and extremely low leakage currents (<100nA @125C), reducing power losses, cost, and system footprint. Utilizing CMOS technology, these devices allow for monolithic integration with other components, resulting in more compact, efficient, and cost-effective solutions. The lateral design with all terminals on one side of the die simplifies assembly, leading to cheaper and more reliable products. Additionally, novel flip-chip solutions for Chip-on-Board assembly will be developed, further enabling product miniaturization.

Feedback Overview:

Hafren's innovative lateral bulk CMOS FETs present a promising advancement in high voltage device technology. The significant reduction in size, power losses, and cost, combined with the ability to integrate monolithically with other components, positions this product well in the semiconductor market. To enhance market adoption, Hafren should focus on building strong partnerships with key players in the target industries and invest in marketing to highlight the unique benefits of their technology. Additionally, conducting pilot projects with potential customers can provide valuable feedback and help refine the product for broader market acceptance.

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CTO

Chief Technology Officer with extensive experience in semiconductor device development and integration.

What are the potential technical challenges in developing lateral MOS-based high voltage devices?

The primary technical challenges include ensuring the reliability of the lateral design under high voltage stress, managing heat dissipation, and achieving the desired low leakage currents while maintaining manufacturability.

How can Hafren ensure the monolithic integration of lateral devices with other components?

Hafren can leverage advanced CMOS technology and design techniques to ensure seamless integration. Collaborating with foundries experienced in mixed-signal and power device fabrication can also help address integration challenges.

What are the key factors that will drive adoption of these lateral MOS-based high voltage devices in the market?

Key factors include demonstrating superior performance metrics (size, leakage current, capacitance), cost advantages, and reliability. Building strong relationships with industry leaders and showcasing successful pilot implementations will also drive adoption.

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